The InGaN films and GaN/InGaN/GaN tunnel junctions (TJs) were grown on GaN templates with plasma-assisted molecular beam epitaxy. As the In content increases, the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases. V-pits and trench defects were not found in the AFM images. p⁺⁺-GaN/InGaN/n⁺⁺-GaN TJs were investigated for various In content, InGaN thicknesses and doping concentration in the InGaN insert layer. The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high. The current density increases with increasing In content for the 3 nm InGaN insert layer, which is achieved by reducing the depletion zone width and the height of the potential barrier. At a forward current density of 500 A/cm², the measured voltage was 4.31 V and the differential resistance was measured to be 3.75 × 10^?3 Ω·cm² for the device with a 3 nm p⁺⁺-In_0.35Ga_0.65N insert layer. When the thickness of the In_0.35Ga_0.65N layer is closer to the “balanced” thickness, the TJ current density is higher. If the thickness is too high or too low, the width of the depletion zone will increase and the current density will decrease. The undoped InGaN layer has a better performance than n-type doping in the TJ. Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.

We report significant differences in high-pressure properties of vanadium at zero temperature and finite temperature when different projector augmented wave (PAW) potentials are used in simulations based on density functional theory. When a PAW potential with only five electrons taken as valence electrons is used, the cold pressures in the high-pressure region are seriously underestimated, and an abnormality occurs in the melting curve of vanadium at about 400 GPa. We show that the reason for these discrepancies lies in the differences in the descriptions of the interatomic force, electron dispersion, and anisotropy of electron bonding obtained from different PAW potentials at high pressure, which lead to striking differences in the mechanical stability of the system. We propose a procedure for selecting PAW potentials suitable for simulations at high temperature and high pressure. Our results provide valuable guidance for future simulations of thermodynamic properties under extreme conditions.